vertical blocks meaning in Chinese

垂直方格

Charge qs was located near the interface of silicon and oxide . with more charge , the field of buried oxide was improved up to the critical breakdown field basis on entirely continuity of electric displacement vector , and then the vertical breakdown voltage was raised . the comparisons between analytical and simulative results proved its availability of this model to interpret the vertical blocking mechanism
该模型认为，将界面电荷qs引入i层si / sio2的si界面，根据电位移矢量的全连续性，界面电荷qs越多，使i层内电场增加，直至sio2的临界电场，从而提高纵向击穿电压vb . v ，很好得解决了器件的纵向耐压问题。